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| 2SJ406 P- Channel Silicon MOS FET Very High-Speed Switching Applications Features and Applications * Low ON-state resistance. * Very high-speed switching. * Low-voltage dreve. * Micaless package facilitating easy mounting. Absolute Maximum Ratings / Ta=25C Drain to Source Voltage Gate to Source Voltage Drain Current (D.C) Drain Current (Pulse) Allowable power Dissipation Channel Temperature Storage Temperature VDSS VGSS ID PW10S, dutycycle1% IDP Tc=25C PD Tch Tstg --200 20 --12 --48 40 150 --55 to +150 unit V V A A W C C min V(BR)DSS V(BR)GSS IDSS IGSS VGS(OFF) | yfs | RDS(On)1 Ciss Coss Crss td(On) tr td(Off) tf VSD ID=--1mA , VGS=0 ID=100A , VGS=0 VDS=--200V , VGS=0 VGS=16V VDS=--10V VDS=--10V ID=--5A VDS=--20V VDS=--20V VDS=--20V , , , , , , , VDS=0 ID=--1mA ID=--6A VGS=--4V f=1MHz f=1MHz f=1MHz --1.5 6.3 --200 20 --100 10 --2.5 10.5 170 2400 540 260 40 120 720 310 --1.0 230 typ max unit V V A A V S m pF pF pF ns ns ns ns --1.5 V TENTATIVE Electrical Characteristics / Ta=25C Drain to Source Breakdown Voltage Gate to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source on State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-oFF Delay Time Fall Time Diode Forward Voltage See Specified Test Circuit . IS =--1.0A , VGS = 0 Switching Time Test Circuit Elecrical Connection Case Outline 10.0 3.2 TO-220 (unit:mm) 4.5 3.5 7.2 2.8 VDD=--100V 0V --10V VIN VIN PW=10uS D.C1% ID=--6A RL=--16.7 VOUT G D 18.1 16.0 5.6 1.6 14.0 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 P.G 50 2SJ406 S 2.55 2.55 2.55 1 : Gate 2 : Drain 3 : Source Specifications and information herein are subject to change without notice. SANYO Electric Co., Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN 990929TM2fXHD |
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